Image

B2B

2317005544 / retail@media-ram.gr ΔΕ-ΠΑ 09:30-18:00 ΣΑ 10:00-14:00
ΕΣΠΑ
0Στο Καλάθι

ΑΝΤΑΛΛΑΚΤΙΚΑ LAPTOP

Image
Si7904dn
CH-FIC045
Si7904DN 7904 Si7904 7904DNDual N-Channel 20-V (D-S) MOSFETPowerPack 1212-8 VDS=20VID=7.7A @ VGS=4.5VID=7.0A @ VGS=2.5VID=6.3A @ VGS=1.8V
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
R474
CH-FIC047
N-Channel 30-V (D-S) MOSFET SiR474DPVDS=30VID=20A @ VDS=10VID=20A @ VDS=4.5V
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
9620s
CH-FIC042
FDMS9620S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ FDMS9620POWER 56 PackQ1 Switch: N-ChannelVDS=30VID=7.5A @ VGS=10VID=6.5A @ VGS=4.5VQ2 Switch: N-ChannelVDS=30VID=10A @ VGS=10VID=8.5A @ VGS=4.5VThis device includes two specialized MOSFETs in a unique dual Power...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4141
CH-FIC039
FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
2659
CH-FIC040
MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4924
CH-FIC038
AO4924Asymmetric Dual N-Channel MOSFETFET1VDS=30VID=9A @ VGS=10VFET2VDS=30VID=7.3A @ VGS=10VThe AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4704
CH-FIC035
AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4842
CH-FIC037
AO484230V Dual N-Channel MOSFETVDS=30VID=7.7A @ VGS=10VThe AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
8878
CH-FIC034
FDS8878N-Channel PowerTrench® MOSFETVDS=30VID=10.2A @ VGS=10VID=9.3A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge,...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
7832
CH-FIC032
F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
8736
CH-FIC033
IRF8736 F8736IRF8736PbFHEXFET Power MOSFETVDS=30VID=18A @ VGS=10V
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
6676as
CH-FIC030
FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4807
CH-FIC031
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4810
CH-FIC029
4810 SI4810 4810DN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET Product SummaryVDS=30VID=10A @ VGS=10VID=8A @ VGS=4.5VShottky Product SummaryVDS=30VIF=4A
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4422
CH-FIC027
AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4456
CH-FIC028
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4466
CH-FIC026
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
8880
CH-FIC023
N-Channel PowerTrench® MOSFET FDS8880VDS=30VID=11.6A @ VGS=10VID=10.7A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
6690
CH-FIC024
FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
6900
CH-FIC021
Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed to...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
7904
CH-FIC022
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=11A @ VGS=10V
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4800
CH-FIC020
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
4502
CH-FIC018
N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and conserves energy, making this device idel for use in power management circuitry. Typical applications are PWMDC-DC...
298 €
Διαθέσιμο
Παράδοση 1 Εώς 3 Ημέρες
+ −
Εμφάνιση 23 Προϊόντων
Product filters
Διαθεσιμότητα
Κατασκευαστής
Τιμή

€  –  €

  • 1€
  • 367€